ST STP210N75F6

N-канальный75 V120A (Tc)4 В @ 250 мкА300 Вт (Тс)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The STP20NM65N is MOSFET N-CH 650V 15A TO-220, that includes STP20NM65N Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.011640 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 160 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 20 ns, and the Rise Time is 10 ns, and Vgs Gate Source Voltage is 25 V, and the Id Continuous Drain Current is 18 A, and Vds Drain Source Breakdown Voltage is 650 V, and the Rds On Drain Source Resistance is 190 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 80 ns, and Typical Turn On Delay Time is 25 ns, and the Channel Mode is Enhancement.

STP20S100CT with circuit diagram manufactured by ST. The STP20S100CT is available in TO-220 Package, is part of the IC Chips.

Features

• Low gate charge

• Very low on-resistance

• High avalanche ruggedness

Applications

• Switching applications