TI CSD95372AQ5M

Полумост60A4,5 В ~ 5,5 В

Overview

The CSD88539NDT is MOSFET 2N-CH 60V 15A 8SOIC, that includes NexFET? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.019048 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SO of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 2.1W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 741pF @ 30V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 15A, and Rds On Max Id Vgs is 28 mOhm @ 5A, 10V, and the Vgs th Max Id is 3.6V @ 250μA, and Gate Charge Qg Vgs is 9.4nC @ 10V, and the Pd Power Dissipation is 2.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 4 ns, and the Rise Time is 9 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 11.7 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 27 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 14 ns, and the Typical Turn On Delay Time is 5 ns, and Qg Gate Charge is 7.2 nC, and the Forward Transconductance Min is 19 S, and Channel Mode is Enhancement.

The CSD88539ND is MOSFET 2N-CH 60V 15A 8SOIC, that includes Dual Configuration, they are designed to operate with a 15A Current Continuous Drain Id 25°C, Drain to Source Voltage Vdss is shown on datasheet note for use in a 60V, that offers Fall Time features such as 4 ns, FET Feature is designed to work in Standard, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 19 S Forward Transconductance Min. In addition, the Gate Charge Qg Vgs is 9.4nC @ 10V, the device is offered in 11.7 A Id Continuous Drain Current, the device has a 741pF @ 30V of Input Capacitance Ciss Vds, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Mounting Type is Surface Mount, and the Mounting Style is SMD/SMT, and Number of Channels is 2 Channel, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Package Case is 8-SOIC (0.154", 3.90mm Width), and the Packaging is Digi-ReelR Alternate Packaging, and Pd Power Dissipation is 2.1 W, and the Power Max is 2.1W, and Qg Gate Charge is 7.2 nC, and the Rds On Drain Source Resistance is 23 mOhms, and Rds On Max Id Vgs is 28 mOhm @ 5A, 10V, and the Rise Time is 9 ns, and Series is NexFET?, and the Supplier Device Package is 8-SOIC, and Technology is Si, and the Tradename is NexFET, and Transistor Polarity is N-Channel, and the Transistor Type is 2 N-Channel, and Unit Weight is 0.019048 oz, and the Vds Drain Source Breakdown Voltage is 60 V, and Vgs Gate Source Voltage is 20 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Vgs th Max Id is 3.6V @ 250μA.

Features

Applications

• High-Performance Gaming Motherboards
• Compact Blade Servers
• DC-DC Converters
• Desktop Computers
• V-Core
• Non-V-Core
• Workstations
• High-Current DC-DC Point-of-Load Converters
• Networking Microprocessor Voltage Regulators
• Telecom Microprocessor