Infineon AUIRFR120Z

N-канальный100 V8,7A (Tc)4 В @ 25 мкА35 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The AUIRFR1018ETR is MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms, that includes Reel Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 110 W Pd Power Dissipation, the device has a 20 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is 79 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 8.4 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 46 nC.

The AUIRFR1018ETRR is MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms, that includes Single Configuration, they are designed to operate with a 79 A Id Continuous Drain Current, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Number of Channels features such as 1 Channel, Package Case is designed to work in TO-252-3, as well as the Reel Packaging, the device can also be used as 110 W Pd Power Dissipation. In addition, the Qg Gate Charge is 46 nC, the device is offered in 8.4 mOhms Rds On Drain Source Resistance, the device has a Si of Technology, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Unit Weight is 0.139332 oz, and the Vds Drain Source Breakdown Voltage is 60 V, and Vgs Gate Source Voltage is 20 V.

Features

• Ruggedized device design

• Advanced process technology

• Ultra-low on-resistance

• Available in the D-Pak package

• Repetitive avalanche allowed up to Tjmax 

Applications

• Automotive applications