Infineon BSO119N03S

N-канальный30 V9A (Ta)2 В @ 25 мкА1,56 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The BSO110N03MS G is MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M, that includes OptiMOS 3M Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BSO110N03MSGXT BSO110N03MSGXUMA1 SP000446062, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in OptiMOS, as well as the DSO-8 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Quad Drain Triple Source Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 1.56 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 4.4 ns, and Rise Time is 4.4 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 12.1 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 11 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 9.5 ns, and the Typical Turn On Delay Time is 7.8 ns, and Channel Mode is Enhancement.

BSO110N03MSG with circuit diagram manufactured by INFINEON. The BSO110N03MSG is available in SOP8 Package, is part of the FETs - Single.

Features

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC

• N-channel

• Logic level

• Excellent gate charge x RDS(on) product (FOM)

• Very low on-resistance RDS(on)

• Avalanche rated

• dv/dt rated

Applications

• Desktop and notebook computers

• Consumer equipment

• PDAs

• MP3 players

• Portable electronics