Infineon CY15B104Q-SXIT

512K x 8-40°C ~ 85°C (TA)

Overview

The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. 

4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K 8 High-endurance 100 trillion (1014) read/writes 151-year data retention (See the Data Retention and Endurance table) NoDelay writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Up to 40-MHz frequency Direct hardware replacement for serial flash and EEPROM Supports SPI mode 0 (0, 0) and mode 3 (1, 1) For more, see pdf.

Features

Applications

• personal computers
• servers
• supercomputers
• telecommunications
• workstations,
• DVD disk buffer
• data buffer
• nonvolatile BIOS memory
• Camcorders
• embedded logic