Infineon IPP60R060P7

N-канальный600 V48A (Tc)4 В @ 800 мкА164 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The IPP600N25N3 G is MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3, that includes OptiMOS 3 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPP600N25N3GXK IPP600N25N3GXKSA1 SP000677832, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the OptiMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 136 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 8 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 25 A, and the Vds Drain Source Breakdown Voltage is 250 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 60 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 22 ns, and Typical Turn On Delay Time is 10 ns, and the Qg Gate Charge is 22 nC, and Forward Transconductance Min is 47 S 24 S.

IPP600N25N3 with EDA / CAD Models manufactured by INFINEON. The IPP600N25N3 is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 250V 25A TO220-3.

Features

CoolMOS™ P7 Series
Bulk Package
MOSFET (Metal Oxide) Technology
600 V Drain to Source Voltage (Vdss)
48A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
60mOhm @ 15.9A, 10V Rds On (Max) @ Id, Vgs
4V @ 800µA Vgs(th) (Max) @ Id
67 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
2895 pF @ 400 V Input Capacitance (Ciss) (Max) @ Vds
164W (Tc) Power Dissipation (Max)
Through Hole Mounting Type