Infineon IPT020N10N5ATMA1

N-канальный100 V31A (Ta), 260A (Tc)3,8 В @ 202 мкА273 Вт (Tc)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

IPT012N08N5ATMA1 with pin details, that includes Reel Packaging, they are designed to operate with a IPT012N08N5 SP001227054 Part Aliases, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as HSOF-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 375 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 30 ns, and Rise Time is 31 ns, and the Vgs Gate Source Voltage is +/- 20 V, and Id Continuous Drain Current is 300 A, and the Vds Drain Source Breakdown Voltage is 80 V, and Vgs th Gate Source Threshold Voltage is 2.2 V, and the Rds On Drain Source Resistance is 1.7 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 82 ns, and Typical Turn On Delay Time is 35 ns, and the Qg Gate Charge is 178 nC, and Forward Transconductance Min is 120 S, and the Channel Mode is Enhancement.

IPT020N10N3 with EDA / CAD Models, that includes XPT020N10 Series, they are designed to operate with a Si Technology, Packaging is shown on datasheet note for use in a Reel, that offers Tradename features such as OptiMOS, Part Aliases is designed to work in IPT020N10N3ATMA1 SP001100160.

Features

OptiMOS™5 Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
100 V Drain to Source Voltage (Vdss)
31A (Ta), 260A (Tc) Current - Continuous Drain (Id) @ 25°C
6V, 10V Drive Voltage (Max Rds On, Min Rds On)
2mOhm @ 150A, 10V Rds On (Max) @ Id, Vgs
3.8V @ 202µA Vgs(th) (Max) @ Id
152 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
11000 pF @ 50 V Input Capacitance (Ciss) (Max) @ Vds
273W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type