Infineon IPW60R017C7XKSA1

N-канальный600 V109A (Tc)4 В @ 2,91 мА446W (Tc)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The IPW50R299CP is MOSFET N-CH 550V 12A TO247-3, that includes CoolMOS CP Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW50R299CPFKSA1 IPW50R299CPXK SP000301163, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-247-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 104 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 12 ns, and the Rise Time is 14 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 12 A, and Vds Drain Source Breakdown Voltage is 500 V, and the Rds On Drain Source Resistance is 299 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 80 ns, and Typical Turn On Delay Time is 35 ns, and the Channel Mode is Enhancement.

The IPW50R350CPFKSA1 is MOSFET N-Ch 500V 10A TO247-3 CoolMOS CP, that includes XPW50R350 Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-247-3, that offers Technology features such as Si, Transistor Polarity is designed to work in N-Channel, as well as the IPW50R350CP IPW50R350CPXK SP000301164 Part Aliases, the device can also be used as CoolMOS Tradename. In addition, the Vds Drain Source Breakdown Voltage is 500 V, the device is offered in 1 N-Channel Transistor Type, the device has a 1 Channel of Number of Channels.

Features

• Best in class RDS(on)/package

• Enabling higher system efficiency by lower switching losses

• Increased power density solutions due to smaller packages

• Suitable for hard and soft switching (PFC and high-performance LLC)

• Increased MOSFET dv/dt ruggedness to 120V/ns

• Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

• Qualified for industrial-grade applications according to JEDEC (J-STD20 and JESD22)

• Increased economies of scale by use of PFC and PWM topologies in the application

• A higher dv/dt limit enables faster switching leading to higher efficiency

• Higher switching frequencies are possible without a loss in efficiency due to low Eoss and Qg

Applications

• SMPSe.g.Computing

• Server

• Telecom

• UPSandSolar

• PFCstages and PWMstages(TTF,LLC)for highpower/performance