Infineon IPW90R800C3

N-канальный900 V6.9A (Tc)3,5 В @ 460 мкА104 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The IPW90R340C3 is MOSFET N-CH 900V 15A TO-247, that includes CoolMOS C3 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW90R340C3FKSA1 IPW90R340C3XK SP000411306, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-247-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 208 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 25 ns, and the Rise Time is 20 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 15 A, and Vds Drain Source Breakdown Voltage is 900 V, and the Rds On Drain Source Resistance is 340 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 400 ns, and Typical Turn On Delay Time is 70 ns, and the Channel Mode is Enhancement.

The IPW90R340C is MOSFET N-CH 900V 15A TO-247 manufactured by INF. The IPW90R340C is available in TO-247-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 900V 15A TO-247.

Features

CoolMOS™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
900 V Drain to Source Voltage (Vdss)
6.9A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
800mOhm @ 4.1A, 10V Rds On (Max) @ Id, Vgs
3.5V @ 460µA Vgs(th) (Max) @ Id
42 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1100 pF @ 100 V Input Capacitance (Ciss) (Max) @ Vds
104W (Tc) Power Dissipation (Max)
Through Hole Mounting Type