Infineon IRF7501TRPBF

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)20V2.4A135 мОм @ 1,7 А, 4,5 В700 мВ при 250 мкА

Overview

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching

Features

HEXFET® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
2.4A Current - Continuous Drain (Id) @ 25°C
135mOhm @ 1.7A, 4.5V Rds On (Max) @ Id, Vgs
700mV @ 250µA Vgs(th) (Max) @ Id
8nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
260pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
1.25W Power - Max
Surface Mount Mounting Type
Micro8™ Supplier Device Package

Applications

Generation V Technology

 Ulrtra Low On-Resistance

 Dual N-Channel MOSFET

 Very Small SOIC Package

 Low Profile (<1.1mm)

 Available in Tape & Reel

 Fast Switching

 Lead-Free

 

IRF7501TRPBF       Applications

This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications.