Infineon IRFR12N25D

N-канальный250 V14A (Tc)5 В @ 250 мкА144 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The IRFR120ZTRPBF is MOSFET N-CH 100V 8.7A DPAK, that includes Reel Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 35 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 23 ns, and Rise Time is 26 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 8.7 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 150 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 27 ns, and Typical Turn On Delay Time is 8.3 ns, and the Qg Gate Charge is 6.9 nC, and Forward Transconductance Min is 16 S, and the Channel Mode is Enhancement.

IRFR12N15D with circuit diagram manufactured by IR. The IRFR12N15D is available in SOT-252 Package, is part of the IC Chips.

Features

• Low Gate-to-Drain Charge to Reduce Switching Losses

• Fully Characterized Capacitance Including

• Effective COSS to Simplify Design, (See App. Note AN1001)

• Fully Characterized Avalanche Voltage and Current

Applications

• High frequency DC-DC converters