Infineon IRLL024Z

N-канальный55 V5A (Tc)3 В @ 250 мкА1 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The IRLL024NPBF is MOSFET N-CH 55V 3.1A SOT223, that includes Tube Packaging, they are designed to operate with a 0.006632 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-223-4, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Dual Drain Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 2.1 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 25 ns, and Rise Time is 21 ns, and the Vgs Gate Source Voltage is 16 V, and Id Continuous Drain Current is 4.4 A, and the Vds Drain Source Breakdown Voltage is 55 V, and Rds On Drain Source Resistance is 100 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 18 ns, and the Typical Turn On Delay Time is 7.4 ns, and Qg Gate Charge is 10.4 nC, and the Channel Mode is Enhancement.

The IRLL024NTRPBF is MOSFET N-CH 55V 3.1A SOT223, that includes 4.4 A Id Continuous Drain Current, they are designed to operate with a SMD/SMT Mounting Style, Number of Channels is shown on datasheet note for use in a 1 Channel, that offers Package Case features such as SOT-223-4, Packaging is designed to work in Reel, as well as the 2.1 W Pd Power Dissipation, the device can also be used as 10.4 nC Qg Gate Charge. In addition, the Rds On Drain Source Resistance is 100 mOhms, the device is offered in Si Technology, the device has a N-Channel of Transistor Polarity, and Transistor Type is 1 N-Channel, and the Unit Weight is 0.006632 oz, and Vds Drain Source Breakdown Voltage is 55 V, and the Vgs Gate Source Voltage is 16 V.

Features

• Advanced Process Technology

• Ultra Low On-Resistance

• 150°C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free

• Non-RoHS Compliant

Applications

• Switching Applications

• New Energy Vehicle

• Photovoltaic Generation

• Wind Power Generation

• Smart Grid