Infineon IRLL024ZTRPBF

N-канальный55 V5A (Tc)3 В @ 250 мкА1 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The IRLL024ZPBF is MOSFET N-CH 55V 5A SOT-223, that includes Tube Packaging, they are designed to operate with a 0.006632 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-223-4, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Dual Drain Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 2.8 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 15 ns, and Rise Time is 33 ns, and the Vgs Gate Source Voltage is 16 V, and Id Continuous Drain Current is 5 A, and the Vds Drain Source Breakdown Voltage is 55 V, and Rds On Drain Source Resistance is 100 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 20 ns, and the Typical Turn On Delay Time is 8.6 ns, and Qg Gate Charge is 7 nC, and the Channel Mode is Enhancement.

IRLL024Z-ND with circuit diagram manufactured by IR. The IRLL024Z-ND is available in SOT-223 Package, is part of the FETs - Single.

Features

• Lead-Free

• Fast Switching

• Ultra Low On-Resistance

• Advanced Process Technology

• 150°C Operating Temperature

• Repetitive Avalanche Allowed up to Tjmax

Applications

• Lighting

• Automotive Body electronics

• Communications equipment

• Wireless infrastructure 

• Industrial Pro audio, video & signage