Infineon S6E0002D0AGV20000

Overview

The S6DR is DIODE GEN PURP REV 200V 6A DO4, that includes S6 Series, they are designed to operate with a Standard Recovery Rectifiers Product, Packaging is shown on datasheet note for use in a Bulk, that offers Unit Weight features such as 0.246918 oz, Mounting Style is designed to work in Through Hole, as well as the DO-203AA, DO-4, Stud Package Case, the device can also be used as Chassis, Stud Mount Mounting Type. In addition, the Supplier Device Package is DO-4, the device is offered in Standard Recovery >500ns, > 200mA (Io) Speed, the device has a Standard, Reverse Polarity of Diode Type, and Current Reverse Leakage Vr is 10μA @ 100V, and the Voltage Forward Vf Max If is 1.1V @ 6A, and Voltage DC Reverse Vr Max is 200V, and the Current Average Rectified Io is 6A, it has an Operating Temperature Junction range of -65°C ~ 175°C, and the Vf Forward Voltage is 1.1 V, and Vr Reverse Voltage is 200 V, and the Ir Reverse Current is 10 uA, and If Forward Current is 6 A, and the Max Surge Current is 167 A.

S6D2121X01-BHC8 with circuit diagram manufactured by SAMSUNG. The S6D2121X01-BHC8 is available in SMD Package, is part of the IC Chips.

Features