Microsemi APT75GP120B2G

1200 V100 A1620 мкДж (вкл.), 2500 мкДж (выкл.)-55°C ~ 150°C (TJ)Вариант TO-247-3

Overview

About MicrosemiMicrosemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.

IGBTs from MicrosemiIGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching frequency range spans from DC for minimal conduction loss to over 100kHz for very high power density SMPS applications. The frequency range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.

Features

POWER MOS 7® Series
Tube Package
PT IGBT Type
1200 V Voltage - Collector Emitter Breakdown (Max)
100 A Current - Collector (Ic) (Max)
300 A Current - Collector Pulsed (Icm)
3.9V @ 15V, 75A Vce(on) (Max) @ Vge, Ic
1042 W Power - Max
1620µJ (on), 2500µJ (off) Switching Energy
Standard Input Type
320 nC Gate Charge
20ns/163ns Td (on/off) @ 25°C
600V, 75A, 5Ohm, 15V Test Condition
Through Hole Mounting Type