ON FDG6332C-F085

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы20V700 мА, 600 мА300 мОм @ 700 мА, 4,5 В1,5 В @ 250 мкА

Overview

FDG6332C_F085 with pin details, that includes Automotive, AEC-Q101, PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.000988 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-TSSOP, SC-88, SOT-363, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a SC-70-6 of Supplier Device Package, and Configuration is 1 N-Channel 1 P-Channel, and the FET Type is N and P-Channel, and Power Max is 300mW, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 113pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 700mA, 600mA, and Rds On Max Id Vgs is 300 mOhm @ 700mA, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 1.5nC @ 4.5V, and the Pd Power Dissipation is 300 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 1.5 nS 1.7 nS, and the Rise Time is 7 ns 14 ns, and Vgs Gate Source Voltage is 12 V, and the Id Continuous Drain Current is 700 mA, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 300 mOhms 420 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 9 nS 6 nS, and Typical Turn On Delay Time is 5 nS 5.5 nS, and the Qg Gate Charge is 1.1 nC 1.4 nC, and Forward Transconductance Min is 2.8 S 1.8 S, and the Channel Mode is Enhancement.

FDG6332C_NL with EDA / CAD Models The FDG6332C_NL is available in SOT363 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
700mA, 600mA Current - Continuous Drain (Id) @ 25°C
300mOhm @ 700mA, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
1.5nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
113pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
300mW Power - Max
Surface Mount Mounting Type