ON FDP20AN06A0

N-канальный60 V9A (Ta), 45A (Tc)4 В @ 250 мкА90 Вт (Тс)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The FDP18N50 is MOSFET N-CH 500V 18A TO-220, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 38.5 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 90 ns, and Rise Time is 165 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 8 A, and the Vds Drain Source Breakdown Voltage is 500 V, and Rds On Drain Source Resistance is 265 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 95 ns, and the Typical Turn On Delay Time is 55 ns, and Forward Transconductance Min is 25 S, and the Channel Mode is Enhancement.

FDP1XSZAM63R262X with circuit diagram manufactured by CONEC. is part of the D-Sub Connectors, , and with support for D-Sub Standard Connectors.

Features

• rDS(ON) = 17m? (Typ.), VGS = 10V, ID = 45A

• Qg(tot) = 15nC (Typ.), VGS = 10V

• Low Miller Charge

• Low QRR Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 12V and 24V systems