ON NTB52N10T4G

N-канальный100 V52A (Tc)4 В @ 250 мкА2 Вт (Ta), 178 Вт (Tc)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The NTB45N06LT4G is MOSFET N-CH 60V 45A D2PAK, that includes NTB45N06L Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 125 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 158 ns, and the Rise Time is 341 ns, and Vgs Gate Source Voltage is 15 V, and the Id Continuous Drain Current is 45 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 28 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 36 ns, and Typical Turn On Delay Time is 13 ns, and the Forward Transconductance Min is 22.8 S, and Channel Mode is Enhancement.

The NTB52N10G is MOSFET N-CH 100V 52A D2PAK manufactured by ON. The NTB52N10G is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 52A D2PAK, Trans MOSFET N-CH 100V 52A 3-Pin(2+Tab) D2PAK Tube.

Features

? Recovery Time of a Source-to-Drain Diode Is Comparable to a Discrete Fast Recovery Diode

? Specified Avalanche Energy

? At Elevated Temperatures, IDSS and RDS(on) are Specified

? The D2PAK Package comes with mounting instructions.

? Packages without pb are available

Applications

? Controls for PWM Motors

? Power Sources

? Converting devices