ON NTJD4105CT4G

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы20 В, 8 В630 мА, 775 мА375 мОм @ 630 мА, 4,5 В1,5 В @ 250 мкА

Overview

This complementary dual device was designed with a small package (2 x 2 mm) and low RDS(on) MOSFETs for minimum footprint and increased circuit efficiency.The low RDS(on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V, 8V Drain to Source Voltage (Vdss)
630mA, 775mA Current - Continuous Drain (Id) @ 25°C
375mOhm @ 630mA, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
3nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
46pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
270mW Power - Max
Surface Mount Mounting Type