ST STL15DN4F5

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)40V60A9 мОм @ 7,5 А, 10 В4 В @ 250 мкА

Overview

This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET F5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
40V Drain to Source Voltage (Vdss)
60A Current - Continuous Drain (Id) @ 25°C
9mOhm @ 7.5A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
25nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1550pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
60W Power - Max
Surface Mount Mounting Type
PowerFlat™ (5x6) Supplier Device Package

Applications

· Designed for automotive applications and

AEC-Q101 qualified

· Extremely low RDS(on)

· Very low gate charge

· Low gate drive power loss

· Wettable flank package

STL15DN4F5     Applications

· Switching applications