ST STL23NS3LLH7

N-канальный30 V92A (Tc)2,3 В @ 1 мА2,9 Вт (Ta), 50 Вт (Tc)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The STL23NM50N is MOSFET N-Ch 500V 0.170Ohm 14A pwr MOSFET, that includes N-channel MDmesh Series, they are designed to operate with a Reel Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as PowerFlat-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 3 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, and Fall Time is 29 ns, and the Rise Time is 19 ns, and Vgs Gate Source Voltage is 25 V, and the Id Continuous Drain Current is 14 A, and Vds Drain Source Breakdown Voltage is 550 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 210 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 71 ns, and the Typical Turn On Delay Time is 6.6 ns, and Qg Gate Charge is 45 nC.

STL23N85K5 with circuit diagram manufactured by ST. The STL23N85K5 is available in FLAT Package, is part of the IC Chips.

Features

• Very low on-resistance

• Very low Qg

• High avalanche ruggedness

• Embedded Schottky diode 

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial