Infineon AUIRF7319Q

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы30V6,5A, 4,9A29 мОм @ 5,8 А, 10 В3 В @ 250 мкА

Overview

The AUIRF7316QTR is MOSFET 2P-CH 30V 4.9A 8SOIC, that includes HEXFETR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.017870 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SO of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 P-Channel (Dual), and Power Max is 2W, and the Transistor Type is 2 P-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 710pF @ 25V, and FET Feature is Logic Level Gate, and the Rds On Max Id Vgs is 58 mOhm @ 4.9A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 34nC @ 10V, and Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 32 ns, and Rise Time is 13 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is - 4.9 A, and the Vds Drain Source Breakdown Voltage is - 30 V, and Vgs th Gate Source Threshold Voltage is - 3 V, and the Rds On Drain Source Resistance is 58 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 34 ns, and Typical Turn On Delay Time is 13 ns, and the Qg Gate Charge is 23 nC, and Channel Mode is Enhancement.

AUIRF7316QTRPBF with circuit diagram manufactured by 30000IR. The AUIRF7316QTRPBF is available in SOP-8 Package, is part of the IC Chips.

Features

HEXFET® Series
Tube Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
6.5A, 4.9A Current - Continuous Drain (Id) @ 25°C
29mOhm @ 5.8A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
33nC @ 10V Gate Charge (Qg) (Max) @ Vgs
650pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type