Infineon AUIRF7341QTR

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)55V5.1A50 мОм при 5,1 А, 10 В3 В @ 250 мкА

Features

 These HEXFET power MOSFET are designed for automotive applications and are packaged in dual SO-8 packages that use the latest technology to achieve extremely low on-resistance per silicon area. Other features of these automotive certified HEXFET power MOSFET include 175C junction operating temperature, fast switching speed and improved repeated avalanche ratings. The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capabilities, making it an ideal choice for a variety of power applications. This dual surface mount SO-8 can greatly reduce circuit board space and can also be used on magnetic tapes and reels.

Applications

· Advanced Planar Technology

· Ultra Low On-Resistance

· Logic Level Gate Drive

· Dual N Channel MOSFET

· Surface Mount

· Available in Tape & Reel

· 175°C Operating Temperature

· Lead-Free, RoHS Compliant

· Automotive Qualified *

AUIRF7341QTR      Applications

The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications.