Infineon AUIRLR3110ZTRL

N-канальный100 V42A (Tc)2,5 В @ 100 мкА140 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The AUIRLR3110Z is MOSFET N-CH 100V 63A DPAK, that includes Tube Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 140 W Pd Power Dissipation, the device has a 16 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is 63 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Rds On Drain Source Resistance is 16 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 34 nC.

The AUIRLR2908TRR is MOSFET 80V 30A 28 mOhm Auto Logic Level MOSFET, that includes TO-252-3 Package Case, they are designed to operate with a SMD/SMT Mounting Style, Technology is shown on datasheet note for use in a Si, that offers Packaging features such as Reel, Transistor Polarity is designed to work in N-Channel, as well as the 80 V Vds Drain Source Breakdown Voltage, the device can also be used as 39 A Id Continuous Drain Current. In addition, the Rds On Drain Source Resistance is 22.5 mOhms, the device is offered in 120 W Pd Power Dissipation, the device has a 0.139332 oz of Unit Weight, it has an Maximum Operating Temperature range of + 175 C.

Features

HEXFET® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
100 V Drain to Source Voltage (Vdss)
42A (Tc) Current - Continuous Drain (Id) @ 25°C
14mOhm @ 38A, 10V Rds On (Max) @ Id, Vgs
2.5V @ 100µA Vgs(th) (Max) @ Id
48 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
3980 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
140W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type