Infineon IPT012N08N5ATMA1

N-канальный80 V300A (Tc)3,8 В @ 280 мкА375 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

IPT007N06NATMA1 with pin details, that includes Reel Packaging, they are designed to operate with a IPT007N06N SP001100158 Part Aliases, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as OptiMOS, Package Case is designed to work in HSOF-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 375 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 22 ns, and Rise Time is 18 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 300 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Vgs th Gate Source Threshold Voltage is 2.8 V, and the Rds On Drain Source Resistance is 0.75 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 76 ns, and Typical Turn On Delay Time is 38 ns, and the Qg Gate Charge is 216 nC, and Forward Transconductance Min is 160 S.

The IPT007N06N is MOSFET MV POWER MOS, that includes Reel Packaging, they are designed to operate with a IPT007N06NATMA1 SP001100158 Part Aliases, Series is shown on datasheet note for use in a XPT007N06, that offers Technology features such as Si, Tradename is designed to work in OptiMOS.

Features

OptiMOS™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
80 V Drain to Source Voltage (Vdss)
300A (Tc) Current - Continuous Drain (Id) @ 25°C
6V, 10V Drive Voltage (Max Rds On, Min Rds On)
1.2mOhm @ 150A, 10V Rds On (Max) @ Id, Vgs
3.8V @ 280µA Vgs(th) (Max) @ Id
223 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
17000 pF @ 40 V Input Capacitance (Ciss) (Max) @ Vds
375W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type