Infineon IPP65R225C7

N-канальный650 V11A (Tc)4 В @ 240 мкА63 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The IPP65R190CFDAAKSA1 is MOSFET N-Ch 650V 17.5A TO220-3, that includes IPP65R190 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPP65R190CFDA IPP65R190CFDAXK SP000928266, that offers Unit Weight features such as 0.211644 oz, Tradename is designed to work in CoolMOS, as well as the TO-220-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in 1 N-Channel Transistor Type, the device has a 17.5 A of Id Continuous Drain Current, and Vds Drain Source Breakdown Voltage is 650 V, and the Rds On Drain Source Resistance is 190 mOhms, and Transistor Polarity is N-Channel.

The IPP65R190E6 is MOSFET N-Ch 700V 20.2A TO220-3, that includes 1 Channel Number of Channels, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPP65R190E6XK IPP65R190E6XKSA1 SP000849876, that offers Series features such as XPP65R190, Technology is designed to work in Si, as well as the N-Channel Transistor Polarity, the device can also be used as 1 N-Channel Transistor Type.

Features

CoolMOS™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
650 V Drain to Source Voltage (Vdss)
11A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
225mOhm @ 4.8A, 10V Rds On (Max) @ Id, Vgs
4V @ 240µA Vgs(th) (Max) @ Id
20 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
996 pF @ 400 V Input Capacitance (Ciss) (Max) @ Vds
63W (Tc) Power Dissipation (Max)
Through Hole Mounting Type