Infineon IPP60R360P7

Overview

The IPP60R299CP is MOSFET N-CH 650V 11A TO-220, that includes CoolMOS CP Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPP60R299CPXK IPP60R299CPXKSA1 SP000084280, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 96 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 5 ns, and the Rise Time is 5 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 11 A, and Vds Drain Source Breakdown Voltage is 650 V, and the Rds On Drain Source Resistance is 299 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 40 ns, and Typical Turn On Delay Time is 10 ns, and the Channel Mode is Enhancement.

IPP60R330P6XKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TO-220-3 Package Case, Technology is shown on datasheet note for use in a Si, that offers Part Aliases features such as IPP60R330P6 SP001017060, Tradename is designed to work in CoolMOS.

Features