Infineon IRFR18N15D

N-канальный150 V18A (Tc)5,5 В @ 250 мкА110 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The IRFR15N20DTRPBF is MOSFET N-CH 200V 17A DPAK, that includes Reel Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 140 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 8.9 ns, and Rise Time is 32 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 17 A, and the Vds Drain Source Breakdown Voltage is 200 V, and Vgs th Gate Source Threshold Voltage is 5.5 V, and the Rds On Drain Source Resistance is 165 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 17 ns, and Typical Turn On Delay Time is 9.7 ns, and the Qg Gate Charge is 27 nC, and Forward Transconductance Min is 4 S, and the Channel Mode is Enhancement.

IRFR18N15B with circuit diagram manufactured by IR. The IRFR18N15B is available in TO-252 Package, is part of the IC Chips.

Features

• Low Gate to Drain Charge to Reduce Switching Losses

• Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)

• Fully Characterized Avalanche Voltage and Current

Applications

• High frequency DC-DC converters.