ON FDG332PZ

P-канал20 V2,6A (Ta)1,5 В @ 250 мкА750 мВт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

Features

• Max rDS(on) = 95mΩ at VGS = -4.5V, ID = -2.6A

• Max rDS(on) = 115mΩ at VGS = -2.5V, ID = -2.2A

• Max rDS(on) = 160mΩ at VGS = -1.8V, ID = -1.9A

• Max rDS(on) = 330mΩat VGS = -1.5V, ID = -1.0A

• Very low level gate drive requirements allowing operationin 1.5V circuits

• Very small package outline SC70-6

• RoHS Compliant

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial