ON FDMS3624S

Overview

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N-Channel

Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 Al

Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 Al

Q2: N-Channel

Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 Al

Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 Al

Low inductance packaging shortens rise/fall times, resulting in lower switching lossesl

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringingl

RoHS Compliantl

Applications

Distribution

Notebook PC