ON FDP5N50

N-канальный500 V5A (Tc)5 В @ 250 мкА85 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The FDP5800 is MOSFET N-CH 60V 14A TO-220, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 242 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 9 ns, and Rise Time is 19 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 80 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 6 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 55 ns, and the Typical Turn On Delay Time is 18 ns, and Channel Mode is Enhancement.

FDP5N25 with circuit diagram manufactured by FSC. The FDP5N25 is available in TO-220 Package, is part of the IC Chips.

Features

? RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A

? Low gate charge ( Typ. 11nC)

? Low Crss ( Typ. 5pF)

? Fast switching

? 100% avalanche tested

? Improved dv/dt capability

? RoHS compliant

Applications

efficient switching mode power supply

active power factor correction