Infineon AUIRFB3806

N-канальный60 V43A (Tc)4 В @ 50 мкА71 Вт (Тс)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The AUIRF9Z34N is MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 P-Channel, the device is offered in 68 W Pd Power Dissipation, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 41 ns, and the Rise Time is 55 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is - 19 A, and Vds Drain Source Breakdown Voltage is - 55 V, and the Rds On Drain Source Resistance is 100 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 30 ns, and Typical Turn On Delay Time is 13 ns, and the Qg Gate Charge is 23.3 nC, and Channel Mode is Enhancement.

AUIRF9952QTRPBF with circuit diagram manufactured by IR. The AUIRF9952QTRPBF is available in SOP-8 Package, is part of the IC Chips.

Features

• Package: TO-220

• RoHS: Lead free / RoHS Compliant

Applications

• Automotive 

• Enterprise systems

• Communications equipment