Infineon AUIRLR3114Z

N-канальный40 V42A (Tc)2,5 В @ 100 мкА140 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The AUIRLR3110Z is MOSFET N-CH 100V 63A DPAK, that includes Tube Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 140 W Pd Power Dissipation, the device has a 16 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is 63 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Rds On Drain Source Resistance is 16 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 34 nC.

The AUIRLR3105TRL is MOSFET 55V 25A 43 mOhm Auto Logic Level MOSFET, that includes 25 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 175 C, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Packaging is designed to work in Reel, as well as the 57 W Pd Power Dissipation, the device can also be used as 13.3 nC Qg Gate Charge. In addition, the Rds On Drain Source Resistance is 43 mOhms, the device is offered in Si Technology, the device has a N-Channel of Transistor Polarity, and Unit Weight is 0.139332 oz, and the Vds Drain Source Breakdown Voltage is 55 V, and Vgs Gate Source Voltage is 16 V.

Features

• Fast Switching

• Logic Level Gate Drive

• Automotive Qualified *

• Ultra Low On-Resistance

• Lead-Free, RoHS Compliant

• Advanced Process Technology

• 175°C Operating Temperature

• Repetitive Avalanche Allowed up to Tjmax

Applications

• Industrial 

• Personal electronics

• Communications equipment