Infineon IPW60R120P7

N-канальный600 V26A (Tc)4 В @ 410 мкА95 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The IPW60R099P6 is MOSFET HIGH POWER PRICE/PERFORM, that includes XPW60R099 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW60R099P6XKSA1 SP001114658, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the TO-247-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in 1 N-Channel Transistor Type, the device has a 6 A of Id Continuous Drain Current, and Vds Drain Source Breakdown Voltage is 600 V, and the Rds On Drain Source Resistance is 99 Ohms, and Transistor Polarity is N-Channel.

IPW60R099P6XKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TO-247-3 Package Case, Technology is shown on datasheet note for use in a Si, that offers Part Aliases features such as IPW60R099P6 SP001114658.

Features

CoolMOS™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
600 V Drain to Source Voltage (Vdss)
26A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
120mOhm @ 8.2A, 10V Rds On (Max) @ Id, Vgs
4V @ 410µA Vgs(th) (Max) @ Id
36 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1544 pF @ 400 V Input Capacitance (Ciss) (Max) @ Vds
95W (Tc) Power Dissipation (Max)
Through Hole Mounting Type