Infineon AUIRFR024NTRL

N-канальный55 V17A (Tc)4 В @ 250 мкА45 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

HEXFET® Series
the avalanche energy rating (Eas) is 71 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 68A.

Surface Mount Mounting Type

Applications

There are a lot of Infineon Technologies
AUIRFR024NTRL applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,